Yuichiro ANDO
Assistant Professor, Department of Electronic Science and Engineering, Kyoto University- Topics of Research：
- Demonstration of spin injection and extraction using atomically controlled ferromagnetic materials/topological insulator hetero structures
■ Laboratory Website
■ Description of Research
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RESEARCH
The main research interest is spintronics using group IV elements such as graphene, silicon (Si) and germanium (Ge). Since Si has long spin relaxation time due to its crystal inversion symmetry and lack of nuclear spins, Si-based spintronics is regarded as a key device in the next generation large scale integrated circuit. To realize highly efficient spin injection into s Si channel, we formed high quality ferromagnetic metal (FM) / Si hetero structures without intermixing layer. Using such an atomically flat FM/Si structure, we succeeded in demonstrating of electrical spin injection into non-degenerate Si channel at room temperature and manipulation of spin related signals by using a gate structure. Recently, we also demonstrated spin injection into non-degenerate Ge and graphene at room temperature.
In this project we study spin transport properties in a surface state of topological insulator. In particular, we focus on correlation between interface structure and spin injection and extraction efficiencies through the topological insulator.
EDUCATION
- 2005
- Bachelor degree in Engineering, Kyoto University
- 2007
- Master degree in Energy Science, Kyoto University
- 2010
- Ph.D. in Engineering, Kyushu University
PROFESSIONAL EXPERIENCE
- 2010-2006
- JSPS Fellow (PD)
- 2012
- Assistant Professor, Graduate School of Engineering Science, Osaka University
- 2014-Present
- Assistant Professor, Department of Electronic Science and Engineering, Kyoto University
SELECTION OF PUBLICATIONS
"Dynamically generated pure spin current in single-layer graphene",
Zhenyao Tang, Eiji Shikoh, Hiroki Ago, Kenji Kawahara, Yuichiro Ando, Teruya Shinjo, and Masashi Shiraishi,
Physical Review B 87, 140401(R) (2013).
"Effect of the magnetic domain structure in spin injector and detector on spin accumulation signals in silicon",
Y. Ando, S. Yamada, K. Kasahara, K. Sawano, M. Miyao, and K. Hamaya,
Applied Physics Letters 101, 232404 (2012).
"An investigation of the inverted Hanle effect in highly-doped Si",
Yasunori Aoki, Makoto Kameno, Yuichiro Ando, Eiji Shikoh, Yoshishige Suzuki, Teruya Shinjyo, and Masashi Shiraishi, Tomoyuki Sasaki and Tohru Oikawa, and Toshio Suzuki,
Physical Review B 86, 081201(R) (2012).
"Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel",
Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya,
Physical Review B 85, 035320 (2012).
"Electric-field control of spin accumulation signals in silicon at room temperature",
Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya,
Applied Physics Letters 99, 132511 (2011).
"Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact",
Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya,
Applied Physics Letters 99, 012113 (2011).
